Prof. Baliga is an internationally recognized expert on power semiconductor devices and he invented, developed and commercialized the Insulated Gate Bipolar Trannsistor IGBT at GE.
Prof. Baliga is a Member of the National Academy of Engineering and a Fellow of the IEEE. He has authored and edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. Scientific American magazine included him among the Eight Heroes of the Semiconductor Revolution when commemorating the 50th anniversary of the invention of the transistor.
He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October 2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.
Research Interests
1. Power Electronics and Power Systems, Including Power Management ICs, Power Semiconductor Devices.
2. Physical Electronics, Photonics & Magnetics, Including III - V Materials and Devices, Silicon Devices and Fabrication.
Selected Publications
1. Author: The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Elsevier, 2015.
2. Author: Fundamentals of Power Semiconductor Devices, 1000-page Textbook, Springer Science, 2008.
3. Author: Advanced Power MOSFET Concepts, 550-page Book, Springer Science, 2010.
4. Author: Advanced Power Rectifier Concepts, 350-page Book, Springer Science, 2009.
5. Author: Advanced High Voltage Device Concepts, 550-page Book, Springer Science, 2011.
